ZXMC3A17DN8
ABSOLUTE MAXIMUM RATINGS
ADVANCE INFORMATION
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DSS
V GS
N-channel
30
±20
P-channel
-30
±20
UNIT
V
V
Continuous Drain Current
(V GS = 10V; T A =25°C) (b)(d)
(V GS = 10V; T A =70°C) (b)(d)
(V GS = 10V; T A =25°C) (a)(d)
Pulsed Drain Current (c)
I D
I DM
5.4
4.3
4.1
23
-4.4
-3.6
-3.4
-20
A
A
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode) (c)
(a) (d)
Power Dissipation at T A =25°C
(b)
I S
I SM
P D
2.6
23
1.25
-2.5
-20
A
A
W
Linear Derating Factor
10
mW/°C
Power Dissipation at T A =25°C (a) (e)
Linear Derating Factor
Power Dissipation at T A =25°C (b) (d)
Linear Derating Factor
Operating and Storage Temperature Range
P D
P D
T j , T stg
1.8
14
2.1
17
-55 to +150
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a) (d)
R JA
100
°C/W
Junction to Ambient (a) (e)
R JA
70
°C/W
Junction to Ambient
(b) (d)
R JA
60
°C/W
NOTES:
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width = 300 s - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with two active die running at equal power.
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
2
相关PDF资料
ZXMC3A18DN8TA MOSFET N-CH/P-CH 30V 8-SOIC
ZXMC3AM832TA MOSFET N+P 30V 2.7A 8MLP 3 X 2
ZXMC3AMCTA MOSFET N+P 30V 2.9A/2.1A DFN
ZXMC4559DN8TA MOSFET N/P-CHAN DUAL 60V 8SOIC
ZXMC4A16DN8TC MOSFET N/P-CHAN DUAL 40V 8SOIC
ZXMD63C03XTC MOSFET N/P-CHAN DUAL 30V 8MSOP
ZXMD63N02XTC MOSFET DUAL N-CHAN 20V 8MSOP
ZXMD63N03XTC MOSFET DUAL N-CHAN 30V 8MSOP
相关代理商/技术参数
ZXMC3A18DN8 制造商:ZETEX 制造商全称:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3A18DN8_05 制造商:ZETEX 制造商全称:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3A18DN8TA 功能描述:MOSFET 30V COMPLEMENTARY ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMC3A18DN8TC 制造商:ZETEX 制造商全称:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3AM832 制造商:ZETEX 制造商全称:ZETEX 功能描述:MPPS⑩ Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3AM832(1) 制造商:未知厂家 制造商全称:未知厂家 功能描述:
ZXMC3AM832(2) 制造商:未知厂家 制造商全称:未知厂家 功能描述:
ZXMC3AM832TA 功能描述:MOSFET Cmp 30V NP Ch UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube